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artículo con referato
"Carbon films obtained from a C60 fullerene ion beam"
H. Huck, E.B. Halac, M. Reinoso and A.G. Dall'Asén
Diam. Relat. Mater. 11(3-6) (2002) 964-968
Carbon films have been produced by accelerating C60+ ions on silicon substrates with energies between 100 and 800 eV. The resulting films have been characterized by Raman spectroscopy and electrical resistivity measurements. Different deposition regimes have been distinguished depending on the energy of the incident fullerenes. At low energies intermolecular covalent bonds begin to insinuate, while at higher energies there is a coexistence of polymeric and amorphous islands. The samples have been annealed in order to study their thermal behavior. The tendency with increasing voltage, as observed by Raman spectroscopy, is to reach a similar behavior to that of annealed amorphous carbon.
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