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Inicio » Actividades I+D > Publicaciones 2003 > Diffusion of Ta in α-Ti
artículo con referato
"Diffusion of Ta in α-Ti"
R.A. Pérez, F. Dyment, G. García Bermúdez, D. Abriola and M. Behar
Appl. Phys. A-Mater. 76(2) (2003) 247-250
The diffusion of Ta in the hcp (α) phase of high purity Ti (99.99%) was studied at different temperatures from 911 K up to 1123°K. To obtain the penetration profiles were used the Rutherford Backscattering Spectrometry (RBS) and Heavy Ion RBS (HIRBS) techniques. The evolution of the diffusion coefficient, D, as a function of temperature follows the prediction of the Arrhenius law. The activation energy of the diffusion process is (318±7) kJ/mol, similar to that corresponding to self-diffusion in α-Ti. On the other hand, the measured values of D are systematically lower than those corresponding to self-diffusion by a factor of approximately 5. This reduction could be explained taking into account the mass difference between Ta and Ti. An increase of the diffusision coefficient was measured when the diffusion proceeds on a less pure Ti (99.9%) matrix. This increment is higher at lower temperatures.
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