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"Properties of Carbon Films Obtained from C60 Ion Beam"
H. Huck, E.B. Halac, M.E. Reinoso and A.G. Dall'Asén
Proc. of the "10th International Ceramic Congress" and "3rd Forum on New Material" (CIMTEC 2002), Florence, Italy, July 14-18, 2002. Ed. P. Vincenzini and M. Dondi.
Advances in Science and Technology Vol.34: Proceedings of the International Symposium "Science for New Technology of Silicate Ceramics", Techna S.R.L. (2003) 79
ISBN: 88-86538-36-7
Carbon films have been produced accelerating C60 ions on silicon substrates. C60+ ions were obtained from fullerene powder at high temperature using a filament-discharge ion source. C60 ions have been accelerated to different energies (from 100 to 1000 eV) on the substrates. The obtained films have been characterized by XPS, Raman spectroscopy and EELS as a function of the ion beam deposition energy.
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