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"Tunneling through a semiconducting spacer: complex band predictions vs. thin film calculations"
J. Peralta Ramos, J. Milano and A.M. Llois
Proc. of the Workshop "At the Frontiers of Condensed Matter II - Magnetism, Magnetic Materials, and their Applications", Buenos Aires, Argentina, June 22-26, 2004. Ed. C. Saragovi, J. Guevara, R. Weht, A.M. Llois and M.T. Causa
Physica B Condens. Matter. 354(1-4) (2004) 166-170
Using a simple tight-binding model, we compare the limitations of the tunneling predictions coming out of the complex band structure of a semiconductor with the output of thin film calculations done for the same semiconducting spacer but considering it to be of finite width, and sandwiched by metallic electrodes. The comparison is made as a function of spacer width and interfacial roughness.
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