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Inicio » Actividades I+D > Publicaciones 2007 > Tunneling magnetoresistance of Fe/ZnSe(0...
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"Tunneling magnetoresistance of Fe/ZnSe(001) single- and double-barrier junctions as a function of interface structure"
J. Peralta-Ramos and A.M. Llois
Proc. of the Workshop "At the Frontiers of Condensed Matter III - New Trends in Structural, Electronic and Magnetic Properties of Matter", Centro Atómico Constituyentes-CNEA, Buenos Aires, Argentina, December 11-15, 2006. Ed. J. Guevara, A.M. Llois, G. Lozano and R. Weht
Physica B Condens. Matter. 398(2) (2007) 393-396
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions.
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