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"Fe/ZnSe/Fe junctions: Interplay between interface structure and tunneling magnetoresistance."
C. Helman, V. Ferrari, J. Milano and A.M. Llois
Proc. of the Workshop "At the Frontiers of Condensed Matter IV - Current Trends and Novel Materials" (FCM2008), Buenos Aires, Argentina, December 9-12, 2008. Ed. J. Guevara, A.M. Llois, G. Lozano and R. Weht
Physica B Condens. Matter. 404(18) (2009) 2841-2844
We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the structure, we discuss about its implications on the tunnel conductance. Our results show that interface reconstruction drives changes in the electronic structure which, in turn, produce an increase of the kinetic energy of the conduction electrons, independently of their spin orientation. We suggest that this reconstruction underlies the low tunnel magnetoresistance (TMR), as it is observed in transport measurements when compared with the theoretical value estimated for sharp interfaces.
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