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artículo con referato
"Anisotropic magnetoresistance in manganites: experiment and theory"
J.D. Fuhr, M. Granada, L.B. Steren and B. Alascio
J. Phys.: Condens. Matter 22(14) (2010) 146001/1-6
We present measurements of the anisotropic magnetoresistance (AMR) of La0.75Sr0.25MnO3 films deposited on (001) SrTiO3 substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10-3 for the current I parallel to the [100] axis of the crystal and vanishing AMR for I||[110], in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.
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