Página Inicial CNEA Laboratorio TANDAR Página Inicial TANDAR Historia del acelerador TANDAR Web interno Web mail
Inicio » Actividades I+D > Publicaciones 2010 > Radiation Effects in Nitride Read-Only M...
acta de conferencia
"Radiation Effects in Nitride Read-Only Memories"
S. Libertino, D. Corso, G. Murè, A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin and S. Lombardo
Proc. of the "21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis" (ESREF 2010), Montecassino Abbey and Gaeta, Italy, October 11-15, 2010. Ed. G. Busatto and F. Iannuzzo
Microelectron. Reliab. 50(9-11) (2010) 1857-1860
We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance).
Av. Gral Paz y Constituyentes, San Martín, Pcia. de Buenos Aires, Argentina
Tel: (54-11) 6772-7007 - Fax: (54-11) 6772-7121