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"Soft breakdown in irradiated high-κ nanolaminates"
F. Palumbo, C. Quinteros, F. Campabadal, J.M. Rafí, M. Zabala and E. Miranda
Proc. of the "17th Biennial International Insulating Films on Semiconductor Conference" (INFOS 2011), Grenoble, France, June 21-24, 2011. Ed. S. Cristoloveanu(IMEP), G. Reimbold(CEA-LETI) and C. Leroux(CEA-LETI)
Microelectron. Eng. 88(7) (2011) 1425-1427
In this paper the electrical characteristics of different atomic layer deposited (ALD) high permittivity dielectric films (Al2O3 and Al2O3/HfO2 nanolaminates) subjected to ion irradiation (25 MeV oxygen ions and 10 MeV protons) are evaluated. The capacitance-voltage (C-V) and current-voltage (I-V) characterization show that high-κ nanolaminates are more tolerant to radiation than the Al2O3 layers, but suffer radiation soft breakdown (RSBD) events. The main variation on the electrical characterization could be interpreted as a gradual decrease of the dielectric constant and/or as an increase of the series resistance of the device.
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