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"Mechanism of Resistive Switching in Bipolar Transition Metal Oxides"
Marcelo J. Rozenberg, María J. Sánchez, Pablo Stoliar, Ruben Weht, Carlos Acha, Fernando Gomez-Marlasca and Pablo Levy
Proc. of the "Nature Conference. Frontiers in Electronic Materials: Correlation Effects and Memristive Phenomena", Aachen, Germany, June 17-20, 2012.
"A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials", Edited by Joerg Heber, Darrell Schlom, Yoshinori Tokura, Rainer Waser and Matthias Wuttig, Wiley-VCH Verlag & Co. KGaA, Germany (2012) 251-252
ISBN: 978-3-527-41191-7
Resistive random access memories (RRAM or ReRAM) composed of a transtition metal oxide dielectric in a capacitor-like structure is a candidate technology for next generation non-volatile memory devices. They are based on the physical phenomenon of resistive switching , which is a sudden and non-volatile change of the resistance under the action of strong electrical stress. Here, we introduce a simple theoretical model which incorporates the main physical ingredients that have emerged from intensive experimental research in the last decade.
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