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artículo con referato
"HfO2 based memory devices with rectifying capabilities"
C. Quinteros, R. Zazpe, F.G. Marlasca, F. Golmar, F. Casanova, P. Stoliar, L. Hueso and P. Levy
J. Appl. Phys. 115(2) (2014) 024501/1-4
We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3-4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.
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