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"Effects of 10 MeV Proton Irradiation of III-V Solar Cells"
E. Yaccuzzi, M. Ochoa, M. Barrera, E. Barrigón, S. Rodríguez, P. Espinet González, M.L. Ibarra, J. García, E.M. Godfrin, M. Alurralde, F. Rubinelli, C. Algora, I. Rey-Stolle and J. Plá
Proc. of the "31st European Photovoltaic Solar Energy Conference and Exhibition" (EU PVSEC 2015), Congress Center Hamburg, Hamburg, Germany, September 14-18, 2015.
31st EU PVSEC Proceedings (2015) 1439-1443
ISBN: 3-936338-39-6
In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum efficiency measurements. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented.
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