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artículo con referato
"10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells"
M. Ochoa, E. Yaccuzzi, P. Espinet-González, M. Barrera, E. Barrigón, M.L. Ibarra, Yedileth Contreras, J. García, E. López, M. Alurralde, C. Algora, E. Godfrin, I. Rey-Stolle and J. Plá
Sol. Energ. Mat. Sol. C. 159 (2017) 576-582
In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization such as external quantum efficiency, light and dark I-V measurements, is performed together with theoretical device modeling in order to guide the analysis of the degradation behavior. The GaInP (on Ge) and Ge cell showed a power loss between beginning of life and end of life of about 4% while the GaInP/GaAs/Ge and GaAs solar cells exhibited the highest damage measured of 12% and 10%, respectively for an irradiation fluence equivalent to an 8-years satellite mission in Low Earth Orbit. The results from single-junction solar cells correlate well with those of triple-junction solar cells. The performance of concentrator solar cells structures is similar to that of traditional space-targeted designs reported in literature suggesting that no special changes may be required to use triple junction concentrator solar cells in space.
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