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"Equivalent circuit model for the switching conduction characteristics of TiO2-based MIM structures"
J. Blasco, N. Ghenzi, J. Suñé, P. Levy and E. Miranda
Proc. of the "29th International Conference on Microelectronics Proceedings" (MIEL 2014), Belgrade, Serbia, May 12-14, 2014.
2014 IEEE 29th International Conference on Microelectronics (MIEL 2014), Volume CFP14432-POD, Published by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. (2014) 281-284
ISBN: 978-1-4799-5295-3 (hardcover)
978-1-4799-5296-0 (eBook)
978-1-4799-5293-9 (cdrom)
978-1-4799-5297-7 (pod)
An equivalent electrical circuit model for the switching conduction characteristics of TiO2-based metal-insulator-metal structures is proposed. The model consists of two antiparallel diodes in combination with series and parallel resistances, which represent the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects, respectively. The diode parameters are expressed by sigmoidal-type threshold functions which account for the transition between the low and high resistance states.
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