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"Experimental study of progressive breakdown in different conductance states of resistive switching structures"
Fernando L. Aguirre, Sebastian M. Pazos and Felix Palumbo
Proc. of the "1st Conference on PhD Research in Microelectronics and Electronics in Latin America" (PRIME-LA 2017), San Carlos de Bariloche, Argentina, February 20-23, 2017. Compiled by Alfonso Chacón and Alfredo Arnaud
2017 1st Conference on PhD Research in Microelectronics and Electronics Latin America (PRIME-LA), Volume CFP17K02-ART, Published by the Institute of Electrical and Electronics Engineers (IEEE). (2017) 25-28
ISBN: 978-1-5090-3962-0 (hardcover)
978-1-5090-3963-0 (on-line)
978-1-5090-3962-3 (usb)
978-1-5090-3964-7 (pod)
In this work, the breakdown transients of Al2O3- and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes are studied. The differences and similarities between these transients in the progressive breakdown regime are assessed. Results show that Al2O3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. Similar results are observed when the devices are in remarkably different conductive states reached as a consequence of a resistive switching event. This suggests that both resistive switching and breakdown processes are linked to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.
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